Light emitting diode constructions and methods for making the same

ABSTRACT

Light emitting diode (LED) constructions comprise an LED having a pair of electrical contacts along a bottom surface. A lens is disposed over the LED and covers a portion of the LED bottom surface. A pair of electrical terminals is connected with respective LED contacts, are sized larger than the contacts, and connect with the lens material along the LED bottom surface. A wavelength converting material may be interposed between the LED and the lens. LED constructions may comprise a number of LEDs, where the light emitted by each LED differs from one another by about 2.5 nm or less. LED constructions are made by attaching 2 or more LEDs to a common wafer by adhesive layer, forming a lens on a wafer level over each LED to provide a rigid structure, removing the common wafer, forming the electrical contacts on a wafer level, and then separating the LEDs.

FIELD

Disclosed herein are light emitting diodes, assemblies comprising thesame, and methods for making such assemblies constructions and, morespecifically, wafer level light emitting diode assemblies and method formaking the same.

BACKGROUND

Light emitting diodes (LEDs) are known in the art and are useful for thepurpose of meeting the needs of numerous end-use lighting applications.Such LEDs are typically formed on a substrate or wafer containing anumber of such LEDs. The wafer is diced to obtain the number of LEDsformed thereon and the separate LEDs are then processed, e.g., toinclude any wavelength conversion material disposed thereon to obtain adesired wavelength light output, and one or more lenses, and then usedto form a desired LED assembly or package comprising a number of theso-formed LEDs. The LEDs in the assembly or package are alsoelectrically connected with one another and configured to makeelectrical contact with a desired connection substrate.

The above-noted conventional manner of making LED assemblies, by workingwith the diced or individual LEDs for the purpose downstream processingfor making LED constructions useful for including in an LED assembly orpackage, is not the most effective from a manufacturing perspective. Theprocess of dicing the LEDs, and then processing the separated LEDsthrough the downstream manufacturing steps needed for making final LEDconstructions useful for then forming an LED assembly or LED packagecomprising the same, is one that is cost and labor intensive as a resultof such downstream processing for such individual LEDs.

Accordingly, it is desired that LED constructions and method for makingthe same be developed in a such a manner so as to enable a number ofLEDs to be subjected to such downstream manufacturing processing at onetime to thereby improve the manufacturing efficiency associated withmaking the same when compared to the above-described method of makingLED constructions. It is further desired that such LED constructions andmethod for making the same be developed in a manner that optimizescertain properties of the LED constructions and LED assemblies andpackaging formed therefrom, including but not limited to obtaining adesired degree of control over the wavelength of light emitted, i.e.,white point control from the LEDs within an LED construction and LEDassemblies and packaging comprising the same.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features and advantages of light emitting diodeconstructions, assemblies comprising the same, and methods for makingthe same as disclosed herein will be appreciated as the same becomesbetter understood by reference to the following detailed descriptionwhen considered in connection with the accompanying drawings.

FIG. 1 is a cross-sectional side view of an example light emitting diodeconstruction during an initial step of making as disclosed herein;

FIG. 2 is a cross-sectional side view of the example light emittingdiode construction of FIG. 1 during a subsequent step of making asdisclosed herein;

FIG. 3 is a cross-sectional side view of the example light emittingdiode construction of FIG. 2 during a subsequent step of making asdisclosed herein;

FIG. 4 is a bottom view of an enlarged section of the example lightemitting diode construction of FIG. 3 better illustrating some of thefeatures as disclosed herein; and

FIG. 5 is a cross-sectional side view of the example light emittingdiode construction of FIG. 3 during a subsequent step of making asdisclosed herein.

SUMMARY

Light emitting diode constructions and light emitting assemblies asdisclosed herein comprise a light emitting diode comprising a pair ofelectrical contacts positioned along a bottom surface. A lens isdisposed over the light emitting diode, wherein the lens is formed froman optically transparent material that encapsulates top and sidesurfaces of the light emitting diode. In an example, the opticallytransparent material is a silicone such as phenyl silicone. In anexample, the lens covers a portion of the light emitting diode bottomsurface, and may have a hemispherical shape along a top portion.

The assembly further comprises a pair of electrical terminals eachconnected with a respective light emitting diode electrical contacts,wherein the pair of electrical terminals are greater in size than therespective electrical contacts and are also connected with the opticallytransparent material. In an example, the electrical terminals may beprovided in the form of printed copper. In an example, the assembly maycomprise a layer of wavelength converting material such as conformalphosphor interposed between the light emitting diode and the lens. In anexample, the lens may comprise a sidewall portion that extends upwardlyfrom the electrical terminals to the hemispherical top portion. Inanother example, the sidewall portions that extend upward arerectangular and/or contiguous with the hemispherical top portion.

The assembly may comprise two or more of the light emitting diodes eachcomprising the lens and the electrical terminals, wherein the lenses ofthe two or more light emitting diodes are connected with one another toform a rigid assembly connecting together the two or more light emittingdiodes and facilitating wafer level downstream processing. In anexample, the two or more light emitting diodes each emit light at adifferent wavelength. For example, the wavelength of light emitted byeach light emitting diode can differ from one another by about 2.5 nm orless.

Light emitting constructions and assemblies as disclosed herein may bemade by disposing two or more light emitting diodes on a common wafer,forming a light conversion material over the two or more light emittingdiodes to thereby provide an initial rigid structure for subsequentlywafer level forming an optically transparent material over the lightconversion material, thereby providing a further level of rigidity tothe resulting construction. In an example, the two or more lightemitting diodes are attached to the common wafer by an adhesive materialinterposed therebetween. In an example, the two or more light emittingdiodes are selected having a light emission that differs from oneanother by about 2.5 nm or less. In an example, the opticallytransparent material is used to form a lens over the light conversionmaterial by compression molding.

The common wafer is removed to expose electrical contacts on the two ormore light emitting diodes for facilitating wafer level formingelectrical terminals on the two or more light emitting diodes, whereineach electrical terminal is connected with a respective electricalcontact and is sized larger than a respective electrical contact andalso contacts the optically transparent material. In an example, wherethe adhesive material used to attach the light emitting diodes is athermal adhesive, the common wafer is removed by subjecting theconstruction to an elevated temperature. In an example, the electricalterminals are formed by depositing a metallic material onto the two ormore light emitting diodes, wherein the metallic material is depositedin a desired configuration of the electrical terminals. Alternatively,the electrical terminals may be formed by depositing a metallic materialonto the two or more light emitting diodes, wherein the metallicmaterial is deposited in excess and a stencil is used to define adesired configuration of the electrical terminals. In an example, themetallic material deposited comprises a binder, and wherein afterforming electrical terminals on the two or more light emitting diodes,the deposited metallic material to an elevated temperature to volatizethe binder.

The so-partially fabricated device is then treated to separate the rigidstructure with electrical contacts into separate light emitting diodepackages wherein each package has electrical terminals exposed. In anexample, the constructed is separated by sawing the rigid structure intoseparate light emitting diode packages.

DESCRIPTION

Light emitting diodes (LEDs) and constructions and assemblies comprisingthe same as disclosed herein make use of LEDs having contacts on acommon surface of the LED, which may include but are not limited to LEDshaving a flip chip architecture, to promote processing and use in anarray assembly and/or packaging for meeting the needs of a particularconnection substrate and end-use application. A feature of the LEDconstructions and methods for making the same as disclosed herein isthat they are specifically developed and engineered to promotedownstream processing of multiple LEDs on a wafer level, to therebyprovide an improved level of manufacturing control and efficiency whencompared to the conventional chip level LED construction and processingtechniques disclosed above.

In an example embodiment, LEDs useful for making LEDs constructionsaccording to the methods disclosed herein are flip chip LEDs, which maybe manufactured to emit light at different wavelengths depending on theparticular end-use application. However, it is to be understood thatLEDs having other types of architectures may also be used. A feature ofsuch LEDs useful for making LED constructions as disclosed herein isthat they be configured to include electrical contacts along a commonsurface of the LED to thereby promote forming a desired electricalcontact with adjacent LEDs in an LED assembly and/or to facilitateforming desired electrical contact with a connection substrate along acommon surface of such LEDs.

FIG. 1 illustrates an example LED construction 10 during an initial stepof a method of making as disclosed herein. During this initial step, adesired number of LEDs 12 (e.g., two or more) are attached to a carrieror substrate 14. The LEDs 12 comprise electrical contacts (not shown)that are disposed along a common surface of each respective LED, andthat are oriented adjacent the carrier or substrate 14. The carrier orsubstrate 14 as used herein may also be referred to as a wafer and isemployed as a temporary member for the purpose of downstream processingof the LEDs disposed therein. A feature of the carrier or substrate isthat it be formed from a sufficiently rigid material so as to facilitatedownstream processing of the LEDs in a manner that resists unwantedbending, flexing, or distortion as it relates to the position of theLEDs disposed thereon. In an example, the carrier or substrate is formedfrom silicone, quartz, and the like. Because the wafer is to be removedduring a subsequent processing step, it is not necessary that the waferbe optically transparent or have other properties typically associatedwith making an LED assembly.

In an example, the wafer has a thickness that may vary depending on theparticular material that is used. In an example where the wafer isquartz, that thickness of the wafer may be from about 0.2 mm to 1.5 mm,from about 0.5 mm to 1 mm, and in a particular example is approximately0.7 mm.

The LEDs 12 are attached to the wafer 14 via a removable adhesive 16. Inan example, the adhesive can be provided in the form of a preformedlayer of adhesive material, or can be provided in a non-preformed form,such as one that is spray or otherwise provided, and that is interposedbetween the LEDs 12 and a top surface 15 of the wafer 14. In an example,the adhesive is formed from a material that can be treated or otherwiseactivated to lose its adhesive properties so as to permit the removal ofwafer from the LEDs during a downstream processing step. It is desiredthat the LEDs 12 be removed from the wafer 14 in a manner that does notdamage the LEDs or any other features or elements of the LEDconstruction 10 that may exist or be present at the time of such removalprocess. In an example, the adhesive layer may be formed from a materialthat loses its adhesive properties upon exposure to heat, ultra-violetradiation, and/or chemical treatment. In an example embodiment, theadhesive that is used is a two-sided adhesive that loses its adhesiveproperties so as to permit removal of the LEDs from the wafer at anelevated temperature, i.e., is a thermal adhesive, wherein in an exampleembodiment the temperature is between about 150 to 200° C., and in aparticular example is approximately 180° C.

In an example, the adhesive has a thickness that may vary depending onthe particular material that is used. In an example, where the adhesiveis a thermal adhesive, the adhesive later has a thickness of from about0.1 mm to 1 mm, from about 0.2 mm to 0.8 mm, and in a particular examplehas a thickness of approximately 0.3 mm.

The LEDs 12 are positioned onto the wafer in a particular predeterminedmanner/pattern, i.e., they are spaced apart from one another apredetermined distance, so as to facilitate forming lenses over thenumber of LEDs during a single downstream manufacturing step as betterdescribed below. Thus, the LED construction 10 as illustrated in FIG. 1,and as disclosed herein according to the principles of this concept, isone that is intentionally developed for the purpose of facilitatingdownstream processing of the LEDs 12 at a wafer level so as to expediteand render more efficient the manufacturing process of making LEDconstructions comprising the same. In an example embodiment, the LEDsare spaced apart from one another a distance that is from about 0.2 mmto 2 mm, 0.3 mm to 1 mm, and in and in a particular example isapproximately 0.5 mm. In a particular embodiment, the LEDs 12 arearranged on the wafer 14 in the form of an array of 2×2, 2×4, 4×4, ormore LEDs having the desired spaced apart distance from one another. Insome embodiments, the LEDs are disposed on an 8 inch round wafer at apredetermined spacing and substantially covering the entire 8 inch roundwafer.

A feature of such wafer level processing provided by the constructionsand methods of the concept as disclosed herein is the ability to useLEDs having specific performance characteristics to form the wafer andultimate LED constructions resulting from downstream wafer levelprocessing. In an example, it is desired that the LEDs selected for suchwafer level processing be ones having a similar/controlled wavelength oflight output, to thereby provide LED constructions having the samecontrolled light output or controlled white point. Accordingly, in anexample embodiment, it is desired that LEDs useful in making LEDconstructions as disclosed herein have a tight or narrowly-controlledwhite point. In an example, the white point of LEDs used herein may bewithin about a 3 step MacAdam Ellipse or a 2 step MacAdam Ellipse, andin a particular embodiment have a white point of about 3,000K within a 2step MacAdam Ellipse.

LEDs 12 as used herein may include a layer of conformal wavelengthconversion material 18 disposed thereover, which may be in the form of aconformal phosphor layer or the like. In an example, the wavelengthconversion material 18 may be disposed over the light emitting surfaces,e.g., the top and/or side surfaces, of the LEDs before the LEDs areattached to the wafer. Alternatively, the layer of wavelength conversionmaterial 18 may be disposed over the LEDs after the LEDs have beenadhered to the wafer. In an example embodiment, the LEDs flip chip LEDsand include conformal phosphor 18 disposed over the top and sidesurfaces of the LEDs 12 after being attached with the wafer 14.

FIG. 2 illustrates an example of the LED construction 10 as illustratedin FIG. 1 and as disclosed above during a subsequent wafer levelprocessing step. Specifically, the LED construction has been furtherprocessed to include a lens member 20 disposed over the LEDs 12. In anexample, the lens member 20 is configured comprising a number ofdifferent lenses or lens elements 22 that are each integral with andinterconnected with one another via webs or channels 24 to thereby forma unitary lens member construction. In an example, where the LEDs 12 areprovided in the form of an array attached to the wafer 14, the lensmember 20 comprises an array of lens elements 22 each disposed over therespective LEDs. The lens elements 22 are disposed over and encapsulaterespective LEDs so as to cover the top surface and side surfaces of therespective LED, wherein any layer of wavelength conversion material 18is interposed therebetween.

In an example, the lens elements 22 each include a dome-shaped orhemispherical portion 26 that is disposed along a top surface of therespective LEDs. The lens elements 22 also include a portion thatextends downwardly from the hemispherical portion along a sidewallportion that at least partially covers an underside or bottom surface 28of the LED, which bottom surface 28 is positioned adjacent the wafer andincludes the electrical contacts of the LED. In an example, lens elementsidewall portion is rectangular in shape and surrounds the respectiveLED 12.

The lens member 20 is formed from an optically transparent material andmay be selected from those polymeric materials capable of being formedby molding process such as by compression molding. In an example, it isalso desired that the material for forming the lens member have asufficient degree of rigidity because, as described in more detailbelow, the lens member is used and relied upon once the wafer is removedfor keeping the encapsulated LEDs together in the form of a sufficientlyrigid structure for further downstream wafer level processing of the LEDconstruction. In an example embodiment, it is desired that the lensmember be formed from an optically transparent material having a Shore Dhardness of about 30 or more. In an example, the lens member is selectedfrom the group of silicone polymers, and in a particular embodiment isphenyl silicone that is cured at a temperature of approximately 180° C.

It is to be understood that the size and configuration of the lensmember 20 and individual lenses or lens elements 22 may vary dependingon such factors as the type of LEDs used, the material selected to formthe lens member, and/or the particular end-use LED construction lightingapplication. In an example, the lens elements 22 hemispherical portion24 have a radius of curvature of from about 0.3 mm to 1 mm, 0.5 to 0.8mm, and in a particular embodiment approximately 0.5 mm. The lens memberweb 24 may have a height as measured from a surface of the wafer of fromabout 30 to 200 microns, 50 to 100 microns, and in a particularembodiment approximately 50 microns.

As mentioned above, in an example the lens member is formed duringcompression molding process, during which process the LEDs are placedinto a volume of the lens material disposed within a respective mold forforming a respective lens element. During this compression moldingprocess an edge of the lens mold is placed into contact with the surfaceof the adhesive layer 16 and held at an elevated pressure for a lengthof time useful for the lens material to cure and harden. In an example,prior to attaching the LEDs to the wafer the electrical contacts of theLEDs may be protected or covered with a material such as a tape or thelike. Covering the LED electrical contacts in this manner beforeadhering the LEDs to the wafer may be desired during downstreamprocessing, e.g., such as when the lens member is being formed, toprotect the electrical contacts along the bottom surface of the LEDsfrom being in direct contact with and attached to the lens material.

FIGS. 3 and 4 illustrate an example LED construction 30, as illustratedin FIG. 2, at a further stage of wafer-level processing. After formingthe lens member 20, the LED construction comprising the wafer is furtherprocessed to remove the wafer and adhesive material from the rigidstructure/LED construction that now exists and that comprises the LEDs12 encapsulated in the lens member 20. The wafer 14 is removed from theremaining rigid structure by subjecting the adhesive material toconditions causing it to reduce or lose its adhesive properties. In anexample, where a thermal adhesive is used to form the adhesive layer,the adhesive layer is heated to a temperature sufficient to permitremoval of the wafer without harming or damaging the remaining LEDconstruction 30. In an example, the adhesive layer is heated to about180° C. and the rigid construction 30 comprising the LEDs encapsulatedin the lens member 20 is removed from the wafer. Once the wafer isremoved, the bottom surface 32 of the remaining LED construction 30 maybe cleaned and/or otherwise prepared for further processing. In anexample where the LED electrical contacts 34 and 36 are covered by tapeor other material, such tape or other material is removed for purposesof gaining access to the electrical contacts 34 and 36, e.g., N and Pelectrical contacts.

Electrical terminals 38 and 40 are formed on the bottom or undersidesurface 32 of the LED construction 30 during wafer level processing. Inan example, the electrical terminals are fanned out and sized havingsurface area that is greater than the N and P electrical contacts 34 and36 of the respective LEDs (as best illustrated in FIG. 4) so as tofacilitate a desired attachment and electrical connection with otherLEDs (e.g., when combined to form an LED assembly) and/or an electricalcontact substrate in a particular end-use application. In an example,one of the electrical terminals 38 and 40 may be sized larger than theremaining electrical terminal, e.g., in an example embodiment theelectrical terminal 40 that is attached to the P contact 36 of an LEDmay be sized larger than that of the electrical terminal 38 that isattached to the N contact 34. In an example, the electrical terminals 38and 40 are sized having an area that is about 50 to 500%, 100 to 300%larger than the LED electrical contacts 34 and 36. In one example, theelectrical terminals 38 and 40 are sized having an area that is 300%larger than the LED electrical contacts 34 and 36.

The electrical terminal 38 and 40 are formed by depositing a desiredlayer thickness of a metallic material onto the underside surface 32 ofthe LEDs 12 in the LED construction so as to cover and make electricalcontact with each of the respective LED N and P electrical contacts 34and 36. In an example, the metallic material used to form the electricalterminals 38 and 40 is applied to the underside surface 32 of the LEDconstruction 30 in a manner covering each of the respective LED N and Pelectrical contacts 34 and 36, and also covering the lens material 42that is adjacent the N and P electrical contacts 34 and 36 and that iscovering the underside surface of the LED construction 30 (as bestillustrated in FIG. 4). The electrical terminals 38 and 40 may have athickness of from about 30 to 500 microns, 100 to 200 microns, and in aparticular embodiment approximately 100 microns. Metallic materialsuseful for forming the electrical terminals 38 and 40 include copper,solder, indium containing materials, gold containing materials, andcombinations thereof. In an example, the electrical terminals comprisecopper.

The process of depositing the metallic material to form the electricalterminals 38 and 40 may be conducted using different techniques. Forexample, the metallic material can be provided by a jetting or printingprocess whereby a composition comprising the desired metallic materialand a binder is loaded into a machine that is designed to deposit adiscrete/precise amount of the material in desired configuration ontothe respective P and N electrical contacts in pattern form to therebyform the desired electrical terminals without the need for a stencil orremoval of excess deposited material. This technique of printing is onethat is very precise and that is similar to dot matrix printing for thepurpose of precisely forming the electrical terminals 38 and 40. Oncethe metallic material is disposed using such method, the depositedmaterial is subjected to an elevated temperature for the purpose ofevaporating or flashing off the binder component, thereby leaving themetallic constituent that forms the desired electrical terminals. Anadvantage of using this process is that the electrical terminals on theLED construction can be formed on the fly without having to perform asubsequent clean-up process, e.g., removing any excess depositedmetallic material, before further processing.

In an example, binder materials useful for applying the electricalterminal according to such printing technique may include materialsknown in the art of metal printing. Polymeric materials that operate tofacilitate the desired control of the printing process and that can beremoved by thermal process at a temperature that will not damage theremaining LED construction 30 can also be used. In an example, themetallic material is copper and the binder used in the printing processcan be removed by heating to a temperature of about 150° C.

Another technique that may be used to deposit the metallic material forforming the electrical terminals 38 and 40 is one that makes use of astencil, screen, mask or the like for the purpose of providing thedesired configuration of the electrical terminals 38 and 40. Unlike theprecise printing process described above, the technique of depositingthe metallic material using a stencil is one that is less precise inthat it relies on the stencil to provide the desired electrical terminalconfiguration and excess metallic material is disposed on the stenciland is removed with the stencil during a subsequent process. Themetallic and binder materials useful for forming the electricalterminals using such a stencil process may be the same as those notedabove, wherein the binder is formed from a material, e.g., an epoxy,that may be removed at a temperature of about 150° C. in a particularembodiment. Once the metallic material is deposited onto the stenciledunderside surface of the LED construction, the stencil is removed toremove the excess applied metallic material, and the deposited metallicmaterial is subjected to thermal treatment to remove the bindermaterial.

Another technique that may be used to deposit the metallic material forforming the electrical terminals 38 and 40 is one that may be referredto as a sintering technique. In an example, the sintering technique makeuse of a metallic composition comprising a binder that is applied usinga stencil or the like, as described above, for the purpose of providingthe desired configuration of the electrical terminals onto the undersidesurface of the LED construction. Once deposited, and the stencil isremoved, the deposited metallic composition is subjected to an elevatedtemperature of greater than about 150° C., e.g., about 250° C., for thepurpose of quickly removing the binder. In an example, the depositedmetallic composition is subjected to such elevated temperature for ashort period of time by IR process or the like. An advantage of suchsintering technique is that it results in a greater degree of bindermaterial removal, by virtue of the higher temperature treatment, tothereby provide a resulting electrical terminals having a higher metalcontent, e.g., essentially just comprising the metallic constituent, andhaving a resulting higher level of electrical conductivity.

Prior to depositing the metallic material it may be useful to treat theunderside surface of the LED construction for the purpose of promotingadhesion of the metallic material use to form the electrical terminalswith the lens material. Such treatment may be in the nature of achemical treatment, thermal treatment, and or a mechanical treatment.For example, an adhesion promoter may be used to promote adhesion, byforming a seed layer or the like, between the silicone lens material andthe metallic material.

FIG. 5 illustrates LED constructions 50 as disclosed herein during asubsequent step of wafer level processing. Namely, after the electricalterminals are formed to connect with respective LED N and P electricalcontacts, the LED construction is further processed to isolate orseparate the individual LEDs in the construction. In an exampleembodiment, the LEDs are diced by conventional technique to formindividual LED constructions 50 that each comprise an LED 52encapsulated by the lens element 54 and comprising the electricalterminals 56 and 58 having a fanned out/expanded surface area (whencompared to the respective LED P and N electrical contacts) that are incontact with both the LED P and N electrical contacts 60 and 62 and thelens material disposed along an underside surface 64 of each respectivethe LED 52.

A feature of LED constructions and methods for forming the same asdisclosed herein is that they are specifically formed and developed tofacilitate downstream manufacturing of multiple LEDs at a wafer level,e.g., whereby the lens member/lens elements, the expanded electricalterminals, and the individual LED constructions are all processed at awafer level, rather than at a chip level, to thereby improvemanufacturing efficiency and reduce manufacturing cost. A furtherfeature of LED constructions as disclosed herein is the ability toprovide a wafer level LED construction for manufacturing processingcomprising LEDs having a controlled white point, such that all of theLEDs included in the construction has a tight white point of within 2step MacAdam Ellipse, and forming completed (with lenses and fanned outelectrical contacts) individual LED constructions therefrom that retainsuch tight white point control.

Although certain specific embodiments of LED constructions and methodsfor making the same have been described and illustrated for purposes orreference, it is to be understood that the disclosure and illustrationsas provided herein not limited to the specific embodiments. Accordingly,various modifications, adaptations, and combinations of various featuresof the described embodiments can be practiced without departing from thescope what has been disposed herein including the appended claims.

What is claimed is:
 1. A method of making a light assembly comprising:disposing two or more light emitting diodes each having a bottom surfaceon a common wafer; forming or positioning a light conversion materialover the two or more light emitting diodes; forming or positioning anoptically transparent material over the light conversion material;forming a rigid structure comprising the optically transparent material,the light conversion material, and the two or more light emittingdiodes; removing the common wafer from the rigid structure and exposingelectrical contacts on the two or more light emitting diodes; forming orpositioning electrical terminals on the rigid structure such that eachelectrical terminal is connected to a respective electrical contact,wherein at least a portion of the optically transparent materialcontacts bottom surface portions of the light emitting diodes, andwherein the optically transparent material extends beyond the lightconversion material such that the electrical terminals directly contactonly the optically transparent material and respective electricalcontracts; and separating the rigid structure with the electricalcontacts into separate light emitting diode packages wherein eachpackage has the electrical terminals exposed.
 2. The method as recitedin claim 1 wherein disposing the two or more light emitting diodes onthe common wafer comprises picking and placing two or more lightemitting diodes onto the common wafer, wherein each light emitting diodethat is picked and placed on the common wafer emits light at awavelength that differs from one another by 2.5 nm or less.
 3. Themethod as recited in claim 1 wherein forming the rigid structurecomprises curing the optically transparent material, the lightconversion material, and the two or more light emitting diodes.
 4. Themethod as recited in claim 1 wherein disposing the two or more lightemitting diodes on the common wafer comprises attaching the two or morelight emitting diodes to the common wafer with an adhesive that isinterposed between the two or more light emitting diodes and the commonwafer.
 5. The method as recited in claim 1 wherein forming orpositioning the optically transparent material over the light conversionmaterial comprises forming a lens over each light emitting diode bycompression molding.
 6. The method as recited in claim 1 whereinremoving the common wafer from the rigid structure comprises subjectingthe common wafer to an elevated temperature.
 7. The method as recited inclaim 1 wherein forming or positioning the electrical terminals on therigid structure comprises depositing a metallic material onto the rigidstructure to cover the respective electrical contact and a portion ofthe optically transparent material that is on the bottom surface of thelight assembly, wherein the metallic material is deposited in a desiredconfiguration of the electrical terminals.
 8. The method as recited inclaim 1 wherein forming or positioning the electrical terminals on therigid structure comprises depositing a metallic material onto the rigidstructure, wherein the metallic material is deposited in excess and aselected portion of the excess is removed to provide a desiredconfiguration of the electrical terminals.
 9. The method as recited inclaim 8 wherein the metallic material comprises a binder, and whereinafter forming or positioning the electrical terminals on the rigidstructure, the method further comprises subjecting the depositedmetallic material to an elevated temperature to volatize the binder. 10.The method as recited in claim 1 wherein separating the rigid structurewith the electrical contacts into the separate light emitting diodepackages comprises sawing the rigid structure into the separate lightemitting diode packages.
 11. A method of making a light emitting diodeconstruction comprising: disposing two or more light emitting diodeseach having a bottom surface on a common wafer; disposing an opticallytransparent material over the light emitting diodes to form a rigidstructure; removing the common wafer from the rigid structure andexposing electrical contacts on the two or more light emitting diodes;forming or disposing electrical terminals to be in connection withrespective electrical contacts of the two or more light emitting diodes,wherein the electrical contacts are positioned on the bottom surface adistance inwardly from respective opposed side edges of the lightemitting diodes, and wherein the optically transparent material contactsportions of the bottom surfaces that extends outwardly away from therespective electrical contacts to light emitting diode side edges, andwherein the electrical terminals directly contact only respectiveelectrical contacts and the optically transparent material; andseparating the rigid structure with the electrical contacts intoseparate light emitting diode packages, wherein each package has exposedelectrical terminals.
 12. The method as recited in claim 11 whereinbefore the disposing the optically transparent material, a lightconversion material is disposed over the two or more light emittingdiodes, and wherein a portion of the optically transparent material isdisposed over and contacts a bottom surface of the light conversionmaterial.
 13. The method as recited in claim 11 wherein during the stepof disposing the optically transparent material, the opticallytransparent material forms a hemispherical lens over each of the two ormore light emitting diodes.
 14. The method as recited in claim 13wherein lenses of each of the two or more light emitting diodes areintegral and connected with one another before the step of separatingthe rigid structure into separate light emitting diode packages.
 15. Themethod as recited in claim 11 wherein the electrical terminals areformed or disposed after disposing the optically transparent materialover the light emitting diodes.
 16. The method as recited in claim 11wherein during the step of forming or disposing the electricalterminals, the electrical terminals are sized larger than the respectiveelectrical contacts that the electrical terminals are connected with.17. The method as recited in claim 11 wherein an adhesive material isinterposed between the common wafer and the two or more light emittingdiodes.
 18. The method as recited in claim 11 wherein during the step offorming or disposing the electrical terminals, the electrical terminalsare formed to cover the respective electrical contacts and a portion ofthe optically transparent material.
 19. A method of making a lightemitting diode construction comprising: disposing two or more lightemitting diodes each having a bottom surface on a common wafer;disposing an optically transparent material over a surface of the two ormore light emitting diodes to form a lens over each light emittingdiode, wherein the optically transparent material extends along portionsof the bottom surface of each light emitting diode; removing the commonwafer from the rigid structure and exposing electrical contacts on thetwo or more light emitting diodes; and forming or disposing electricalterminals to be in connection with respective electrical contacts of thetwo or more light emitting diodes, and wherein the electrical terminalsdirectly contact only respective electrical contacts and the opticallytransparent material.
 20. The method as recited in claim 19 wherein theelectrical terminals are sized larger than the electrical contacts. 21.The method as recited in claim 19 further comprising the step ofseparating the rigid structure with the electrical contacts intoseparate light emitting diode packages.